Surface roughening during low temperature Si(100) epitaxy

Kinetic Surface Roughening and Pattern Formation in Molecular Beam Epitaxy

Hybrid surface roughening modes during low-temperature heteroepitaxy: Growth of fully-strained metastable Ge12xSnx alloys on Ge„001...231

Fully-strained single-crystal metastable Ge12xSnx alloys were grown on Ge~001! up to their critical epitaxial thickness values tepi(x) in order to probe surface roughening pathways leading to heteroepitaxial breakdown during low-temperature molecular-beam epitaxy under large compressive strain. All films with x.0.09 have comparable roughnesses while films with x,0.09 are considerably rougher wi...

Chlorine Etching For In-Situ Low-Temperature Silicon Surface Cleaning For Epitaxy Applications

Chlorine in a nitrogen ambient is used to clean silicon surfaces of impurities by etching a thin layer from the surface prior to silicon epitaxial growth. Silicon etch rates of 1-10 nm/min could be achieved for temperatures from 525C to 575C. The etching of a thin layer of silicon from the surface is also capable of removing phosphorus from the surface, which conventionally is difficult to remo...

Surface roughening in low-pressure chemical vapor deposition

We examine, using (211)-dimensional Monte Carlo simulations, the roughening behavior of a reemission model for chemical vapor deposition. We find that, for pure first-order reemission, the interface roughens logarithmically with time and that the scaling exponents are, for most sets of conditions, close to the exponents of the Edwards-Wilkinson model (a50, b50, and z52). We compare our results ...

Interfacial Roughening During Solid Phase Epitaxy: Interaction of Dopant, Stress, and Anisotropy Effects

The effects of externally applied stress and rate-enhancing dopants on interfacial roughness during solid phase epitaxial growth of ionimplantation doped Si are investigated using cross-sectional transmission microscopy and time-resolved reflectivity. We find long-wavelength roughness in the absence of applied stress that arises solely from the dopant gradient. With the addition of compressive ...